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In this chapter the principal function of the bipolar transistor, the inner transistor behavior, and recent technological trer ds were treated. Sophisticated self-alignment techniques and the incorporation of a SiGe alloy base have extended the performance of bipolar devices and circuits enormously. From a technical viewpoint bipolar circuits are often preferred solutions for analog, mixed analog/digital, and power-consuming peripherals because of their low stable threshold, high transconductance and speed, and comparatively low dynamic power consumption. Otherwise, there are well-known deficiencies with bipolar circuits such as manufacturability and static power consumption. Also, the technically attractive combination of bipolar circuits and CMOS circuits (BiCMOS) suffers from additional costs and technical compromises with respect to the bipolar part. The economic pressure of CMOS technology on the bipolar market is expected to continue.

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The ColorDialog class The ColorDialog class provides a dialog box that allows the user to select a color from the palette and to add colors to that palette. Table 9-6 describes some of the properties and methods of the ColorDialog class. Table 9-6: ColorDialog class Properties and Methods Property Or Method ShowDialog Color Description Displays the dialog box. Determines the color selected by the user. Determines whether the user can add custom colors to the dialog box.

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In order to yield linear-phase wavelets, both filter Ho(z) Go(.) have to be and linear-phase. Furthermore, the filters need to satisfy the regularity condition as outlined in Section 8.6.6in order to allow the construction of continuous scaling functions and wavelets. When expressing the linear-phase property, two types of symmetry have to be considered, depending on whether the filter length is even or odd. We will outline these properties for the filter Ho(z) start with odd-length and filters. The second filter Go ( z ) ,which completes a perfect reconstruction pair, has the same type of symmetry. Odd-Length Filters. Odd-length linear-phase filters satisfy

POSITION SENSITIVE SEMICONDUCTOR STRIP DETECTORS photons. In the case of incoherent (Compton) scattering most of the photons are scattered by large angles from the trajectories of primary photons and such scattered photons can produce false position measurements. The angular distribution of photons scattered in the coherent (Rayleigh) processes has a very dominant peak in the forward direction so that most of the scattered photons diverge by very small angles from the trajectories of primary photons and they do not affect the position measurements. The contribution of scattering effects to the spatial resolution of a semiconductor detector depends on the ratio of the cross-sections for incoherent and coherent scattering to the crosssection for the photoabsorption. The cross-section for the photoabsorption decreases with increasing energy E of X-rays as 1/E 3 , while the crosssection for Compton scattering shows relatively at dependence on the photon energy. Thus, the relative contribution of the incoherent scattering increases strongly with increasing energy of Xrays. The cross-section for the coherent scattering depends on the photon energy in a similar way as for the photoabsorption so that the relative contributions of these two effects remains at the same level over a wide range of X-ray energy.

Applebaum. S. [203]..............123 Arimochi. K . [ 17 l ] .................. 92 Arn0tt.R . [1].0, 127. 128. 131. 132. 134. 144.146.148.160.163. 193 Arroyo-Fernindez. B [99] ........... 29 . Asghar. S . [328] ................... 205

For future developments, we will concentrate on two topics that will probably define the role bipolar technology can play The first question concerns manufacturability; the second one addresses the possible impact of silicon-based heterostructures on other technologies The complexity of bipolar circuits is less than that of CMOS circuits, and the fabrication is rather sophisticated Which trends are visible that not only promise technical benefits but also simplify fabrication and lower power consumption At the moment, self-adjustment techniques and epitaxial deposition processes are developed separately Specially adopted self-alignment techniques together with a single-step epitaxial definition of the complete active transistor structure have an enormous potential to improve competitive manufacturing of bipolar circuits The highest speed of a bipolar transistor is always obtained at high current densities near the Kirk limit.

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