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shown in Fig. 12.6, and passive elements that, in combination, form printed integrated circuits (pICs) providing logic operation functionality. Printed EL products are used for backlighting of automobile instrument panels and cell phone key pads. OLED/PLED technologies will provide large and small high-resolution displays that will compete with liquid crystal displays and solid-state lighting. Printed battery technology has been in commercial use for instant cameras for over 20 years and more recently has the ability to provide power for electronics and cosmetic/pharmaceutical products with novel form factors.47 Printed passive circuitry fabricated on ceramic substrates has been in commercial use for more than two decades. Within the last ve years, the microelectronics industry has observed the commercial launch of printed passive elements embedded in organic rigid and exible PWBs to reduce the electronic component part count and PWB real estate; this technology has enabled the launch of ultra-small Bluetooth ear modules.49 The most recent development in printed circuits technology is the printing of active circuitry for the design of radio frequency identi cation (RFID) tags, display backplanes, and sensors.

Any random process of current or voltage in a part or a circuit block results in noise. In other words, noise inevitably exists in a part or a circuit block because in the basic parts, such as the resistor, capacitor, inductor, transistor, and so on, there are many random processes in the motions of electrons and other charge carriers. Consequently, it is found that there are many kinds of noise sources, such as shot noise, thermal noise, icker noise, burst noise (popcorn noise), and avalanche noise. There are three main noise sources in a circuit block: 1) Shot noise A current in a device, part, or runner is composed of a large number of moving carriers, either positive charges or electrons with their random velocities. The product of the electric charge and velocity of a charge or an electron forms a current element. Owing to the different velocities, these current elements are different from each other. The sum of all the current elements at a junction

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where P, is the spontaneous polarization that depends in part on the applied voltage, A is the electrode area, n is a parameter (that may have a noninteger value) related to the number of reversed domains that come from latent nuclei and thermally activated nuclei per unit area, and to is a characteristic time related to the same latent nuclei and thermally activated nuclei. Equation 8.15 fits polarization reversal reasonably well for a few different ferroelectric materials. However, different values of n ranging between 1 and 2 are required to fit the data, and it is not understood why the specific noninteger values are obtained. It is difficult to determine theoretically the dependence of the switching time on applied field. Empirically, the switching time has been determined for certain

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with In, lp, the depletion layer widths extending into the n side and the p side, respectively. The BC depletion layer extends mainly into the collector because of its lower doping, but the base extension has to be considered for the Early effect (output resistance). In a well-designed transistor the depletion width of the BC junction is roughly the collector width wo; otherwise either the collector series resistance increases (1 < wo) or the collector junction capacity Cj, is higher than necessary. The right collector doping ND can be calculated for a given width wco and a collector-base voltage IVcBI by inserting into Eq. 2.14 1 =wco, (1/NA) -0, Vj = -I VcB . Table 2.2 shows several width and voltage values and the corresponding doping values at which punchthrough occurs, meaning that the collector epilayer (wo0) is fully depleted. With decreasing collector width, the breakdown voltage BVcBo is reduced, the collector transit time is reduced (interesting for ultra-high-speed transistors), and the collector junction capacity Cj, is increased. Let us now consider the minority carrier concentration at equilibrium or with applied voltages VEB and VcB (common base). The coordinate axis of Figure 2.6 and the band diagram of Figure 2.7 will be used. In a widely used approximation the minority-carrier concentration at the edge of the depletion region is dependent only on the equilibrium concentration and the applied voltage Vj (positive polarity at forward bias): n(x=0)= no exp Lno= nif

Figure 19.3-2. Operations for terminating calls. (From IS-41.3-B. Reproduced with permission of TIA.)

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